Physics And Technology Of Silicon Carbide Devices at Meripustak

Physics And Technology Of Silicon Carbide Devices

Books from same Author: George Gibbs

Books from same Publisher: Scitus Academics

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  • General Information  
    Author(s)George Gibbs
    PublisherScitus Academics
    ISBN9781681176437
    Pages284
    BindingHardcover
    LanguageEnglish
    Publish YearJanuary 2017

    Description

    Scitus Academics Physics And Technology Of Silicon Carbide Devices by George Gibbs

    Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages—high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.